The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2009
Filed:
Oct. 04, 2005
Doo-youl Lee, Seoul, KR;
Seok-hwan OH, Gyeonggi-do, KR;
Gi-sung Yeo, Seoul, KR;
Sang-gyun Woo, Gyeonggi-do, KR;
Sook Lee, Seoul, KR;
Joo-on Park, Gyeonggi-do, KR;
Sung-gon Jung, Seoul, KR;
Doo-Youl Lee, Seoul, KR;
Seok-Hwan Oh, Gyeonggi-do, KR;
Gi-Sung Yeo, Seoul, KR;
Sang-Gyun Woo, Gyeonggi-do, KR;
Sook Lee, Seoul, KR;
Joo-On Park, Gyeonggi-do, KR;
Sung-Gon Jung, Seoul, KR;
Abstract
Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.