The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2009

Filed:

Jan. 30, 2004
Applicants:

Bhanwar Singh, Morgan Hills, CA (US);

Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);

Khoi A. Phan, Santa Jose, CA (US);

Bharath Rangarajan, Santa Clara, CA (US);

Ramkumar Subramanian, Sunnyvale, CA (US);

Inventors:

Bhanwar Singh, Morgan Hills, CA (US);

Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);

Khoi A. Phan, Santa Jose, CA (US);

Bharath Rangarajan, Santa Clara, CA (US);

Ramkumar Subramanian, Sunnyvale, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03F 1/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

A mask is provided to be used with nanoprint lithography processes to facilitate reproduction of small features required for the production of integrated circuits. A translucent substrate is provided along with one or more three-dimensional features that include one or more vertical sidewalls. An absorbing material is deposited upon one or more of the vertical sidewalls so that light in an incident direction to an upper surface of the substrate will be absorbed by the absorbing material, resulting in light blocking features. One or more horizontal surfaces are formed upon one or more of the three-dimensional features, which allow light rays to exit a lower surface of the substrate unobstructed by the absorbing material.


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