The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Aug. 19, 2005
Tetsuji Ueno, Suwon-si, KR;
Hwa-sung Rhee, Seongnam-si, KR;
Ho Lee, Cheonan-si, KR;
Dong-suk Shin, Yongin-si, KR;
Seung-hwan Lee, Suwon-si, KR;
Tetsuji Ueno, Suwon-si, KR;
Hwa-Sung Rhee, Seongnam-si, KR;
Ho Lee, Cheonan-si, KR;
Dong-Suk Shin, Yongin-si, KR;
Seung-Hwan Lee, Suwon-si, KR;
Abstract
A transistor includes a semiconductor substrate that has a first surface of a {100} crystal plane, a second surface of the {100} crystal plane having a height lower than that of the first surface, and a third surface of a {111} crystal plane connecting the first surface to the second surface. First heavily doped impurity regions are formed under the second surface. A gate structure is formed on the first surface. An epitaxial layer is formed on the second surface and the third surface. Second heavily doped impurity regions are formed at both sides of the gate structure. The second heavily doped impurity regions have side faces of the {111} crystal plane so that a short channel effect generated between the impurity regions may be prevented.