The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jun. 21, 2005
Kaushal K. Singh, Santa Clara, CA (US);
Sean M. Seutter, San Jose, CA (US);
Jacob Smith, Santa Clara, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Steve G. Ghanayem, Los Altos, CA (US);
Adam Brailove, Gloucester, MA (US);
Robert Shydo, Andover, MA (US);
Jeannot Morin, Intervale, NH (US);
Kaushal K. Singh, Santa Clara, CA (US);
Sean M. Seutter, San Jose, CA (US);
Jacob Smith, Santa Clara, CA (US);
R. Suryanarayanan Iyer, Santa Clara, CA (US);
Steve G. Ghanayem, Los Altos, CA (US);
Adam Brailove, Gloucester, MA (US);
Robert Shydo, Andover, MA (US);
Jeannot Morin, Intervale, NH (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.