The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Jun. 06, 2005
Kiyoshi Mitani, Annaka, JP;
Kiyoshi Mitani, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
In a first ion implantation step (a1), a delamination-intended ion implantation layeris formed by implanting ions at a dosage less than a critical dosage from the insulating filmside of a bond wafer. In an additional function layer deposition step (b2), an additional function layeris deposited on the insulating filmof the bond wafer. In a second ion implantation step (c1), by implanting ions at a dosage, the delamination-intended ion implantation layeris matured into a delamination ion implantation layer'. Thereby, the delamination ion implantation layer is formed by two steps of ion implantation having the additional function layer deposition step therebetween, and therefore non-uniformity of the additional function layer does not influence uniformity of a film thickness of a bonded semiconductor thin layer.