The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2009

Filed:

May. 12, 2004
Applicants:

Shabani B. Mohammad, Tokyo, JP;

Yoshikazu Shiina, Tokyo, JP;

Inventors:

Shabani B. Mohammad, Tokyo, JP;

Yoshikazu Shiina, Tokyo, JP;

Assignee:

Sumco Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 33/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

To expediently and quantitatively estimate Cu within a silicon substrate without fully dissolving the silicon substrate and to ascertain the process contamination, there is provided a method for quantitatively determining the Cu concentration in a Cu containing silicon substrate having obverse and converse surfaces, the silicon substrate contains at least 3×10atoms/cmof boron and is heated at a temperature of no more than 600° C., the improvement comprises heating the converse surface of the substrate at a temperature between 300° C. to 350° C. for a period of 1 to 12 hours and then quantitatively analyze the Cu concentration at obverse and converse surfaces of the heated substrate.


Find Patent Forward Citations

Mohammad, Shabani. (2009). Method for detecting cu concentration of silicon substrate (U.S. Patent No. 7601541). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7601541

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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