The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Mar. 06, 2006
Sung-min Huh, Yongin-si, KR;
Hee-bom Kim, Suwon-si, KR;
Seong-woon Choi, Suwon-si, KR;
Dong-wan Kim, Seongnam-si, KR;
Chan-uk Jeon, Seongnam-si, KR;
Sung-min Huh, Yongin-si, KR;
Hee-bom Kim, Suwon-si, KR;
Seong-woon Choi, Suwon-si, KR;
Dong-wan Kim, Seongnam-si, KR;
Chan-uk Jeon, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.