The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Feb. 24, 2004
Tsutomu Tetsuka, Ibaraki-ken, JP;
Kazuyuki Ikenaga, Ibaraki-ken, JP;
Tetsuo Ono, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Naoshi Itabashi, Hachioji, JP;
Tsutomu Tetsuka, Ibaraki-ken, JP;
Kazuyuki Ikenaga, Ibaraki-ken, JP;
Tetsuo Ono, Iruma, JP;
Motohiko Yoshigai, Hikari, JP;
Naoshi Itabashi, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
A plasma processing apparatus having 90% or more of a side wall of an inner wallof a reaction chambercovered with a dielectric, and equipped with an earthed conductive memberhaving an area of less than 10% of the side wall area of the inner walland having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive memberis located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasmalocated near a wafer holding electrodewhere there is relatively large wall chipping.