The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jan. 27, 2005
Kouichi Nagai, Kawasaki, JP;
Hideaki Kikuchi, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Yasutaka Ozaki, Kawasaki, JP;
Kouichi Nagai, Kawasaki, JP;
Hideaki Kikuchi, Kawasaki, JP;
Naoya Sashida, Kawasaki, JP;
Yasutaka Ozaki, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
The semiconductor device comprises a first insulation filmformed over a semiconductor substratefirst conductor plugburied in a first contact holeformed down to a source/drain diffused layera capacitorformed over the first insulation filma first hydrogen diffusion preventing filmformed over the first insulation filmcovering the capacitora second insulation filmformed over the first hydrogen diffusion preventing film and having the surface planarized, a second hydrogen diffusion preventing filmformed over the first hydrogen diffusion preventing filmand having the surface planarized, a second hydrogen diffusion preventing filmformed over the second insulation filmsecond conductor plugburied in a second contact holeformed down to the lower electrodeor the upper electrodeof the capacitora third conductor plugburied in a third contact holeformed down to the first conductor plugand an interconnectionconnected to the second conductor plugor the third conductor plug