The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Dec. 13, 2005
Applicants:
Satoru Yamada, Tokyo, JP;
Ryo Nagai, Tokyo, JP;
Inventors:
Satoru Yamada, Tokyo, JP;
Ryo Nagai, Tokyo, JP;
Assignee:
Elpida Memory, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A CMOS device includes a silicon substrate, a gate insulating film, and a gate electrode including a silicon layer doped with boron and phosphorous, a tungsten nitride layer and a tungsten layer. A ratio of a maximum boron concentration to a minimum boron concentration in a boron concentration profile across the thickness of the silicon layer is not higher than 100. The CMOS device has a lower NBTI (Negative Bias Temperature Instability) degradation.