The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Mar. 23, 2007
Arkadii V. Samoilov, Sunnyvale, CA (US);
Rohini Kodali, Saratoga, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Yihwan Kim, Milpitas, CA (US);
Arkadii V. Samoilov, Sunnyvale, CA (US);
Rohini Kodali, Saratoga, CA (US);
Ali Zojaji, Santa Clara, CA (US);
Yihwan Kim, Milpitas, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.