The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7598169 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 06, 2009

Filed:

Feb. 21, 2007
Applicants:

Qinghuang Lin, Yorktown Heights, NY (US);

Elbert E. Huang, Tarrytown, NY (US);

Christy S. Tyberg, Mahopac, NY (US);

Ronald A. Dellaguardia, Poughkeepsie, NY (US);

Inventors:

Qinghuang Lin, Yorktown Heights, NY (US);

Elbert E. Huang, Tarrytown, NY (US);

Christy S. Tyberg, Mahopac, NY (US);

Ronald A. DellaGuardia, Poughkeepsie, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.


Find Patent Forward Citations

Lin, Qinghuang. (2009). Method to remove beol sacrificial materials and chemical residues by irradiation (U.S. Patent No. 7598169). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7598169

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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