The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2009

Filed:

Apr. 29, 2008
Applicants:

Min-hung Chen, Hsinchu County, TW;

Kao-tsair Tsai, Hsinchu, TW;

Inventors:

Min-Hung Chen, Hsinchu County, TW;

Kao-Tsair Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/46 (2006.01); H01L 21/301 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of manufacturing an overlay mark is provided. Two first X-direction isolation structures, two first Y-direction isolation structures, two second X-direction isolation structures, and two second Y-direction isolation structures are formed in a substrate, where the first X-direction isolation structures and the first Y-direction isolation structures are arranged to a first rectangle, and the second X-direction isolation structures and the second Y-direction isolation structures are arranged to a second rectangle. The second rectangle is located in the first rectangle. A first dielectric layer and a conductive layer are formed sequentially on the substrate. A planarization process is performed to remove a portion of the conductive layer till the isolation structures are exposed. A second dielectric layer is formed on the substrate. A rectangle pattern is formed on the second dielectric layer. The sides of the rectangle pattern are located above the isolation structures.


Find Patent Forward Citations

Loading…