The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
Jul. 21, 2006
Wei-fang Su, Taipei, TW;
Yang-fang Chen, Taipei, TW;
Ming-chung Wu, Taipei, TW;
Chih-min Chuang, Taipei, TW;
Yu-ching Huang, Taipei, TW;
Wei-Fang Su, Taipei, TW;
Yang-Fang Chen, Taipei, TW;
Ming-Chung Wu, Taipei, TW;
Chih-Min Chuang, Taipei, TW;
Yu-Ching Huang, Taipei, TW;
National Taiwan University, Taipei, TW;
Abstract
The present invention discloses a positive and negative dual function magnetic resist lithography method. At first, a substrate coated with a positive and negative dual function magnetic resist layer is provided. The positive and negative dual function magnetic resist layer comprises a manganese(Mn)-containing precursor and at least one hydrophilic polymer. Next, at least one exposure procedure for the positive and negative dual function magnetic resist layer is performed to form either a positive resist or a negative resist. In addition, after the at least one exposure procedure, a developing procedure using water-soluble developer is performed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile