The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2009
Filed:
May. 13, 2005
Tomohiko Yamamoto, Kawasaki, JP;
Tomohiko Yamamoto, Kawasaki, JP;
Fujitsu Microelectronics Limited, Tokyo, JP;
Abstract
Data (pattern data) () of a mask data () to form a mask pattern is made into an octagon. An electron-beam lithography system has a high resolution, and it requires a polygonal pattern data having many more vertexes such as an octagon. With the use of such a pattern data, a photomask () having a mask pattern () being an aperture closer to a circle (approximated circle) can be obtained. Backed by this, it is possible to form resist patterns at smaller pitches without causing failures in manufacturing a device such as a reduction in resist film thickness, a disconnection between actual patterns such as of contact holes, and so forth. Further, it is possible to eliminate the factor of mask manufacturing process from the optical proximity correction to simplify the optical proximity correction, so that desired macro actual patterns can be formed easily and accurately.