The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Jan. 12, 2007
Jeffrey Alexander Chard, Sunnyvale, CA (US);
Junwei Bao, Palo Alto, CA (US);
Jeffrey Alexander Chard, Sunnyvale, CA (US);
Junwei Bao, Palo Alto, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
One or more profile parameters of a structure fabricated on a wafer in a wafer application are determined by developing a correlation between a set of profile models and one or more key profile shape variables. The wafer application has one or more process steps and one or more process parameters. Each profile model is defined using a set of profile parameters to characterize the shape of the structure. Different sets of profile parameters define the profile models in the set. The one or more key profile shape variables include one or more profile parameters or one or more process parameters. A value of at least one key profile shape variable of the process step of the wafer application to be used in fabricating the structure is determined. One profile model is selected from the set of profile models based on the determined correlation and the value of the at least one determined key profile shape variable. The structure is fabricated using the process step and the value of the at least one determined key profile shape variable determined. A measured diffraction signal off the fabricated structure is obtained. One or more profile parameters of the fabricated structure are determined based on the measured diffraction signal and the selected profile model.