The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
May. 08, 2007
Ii-young Yoon, Hwaseong-si, KR;
Hong-jae Shin, Seoul, KR;
Nae-in Lee, Seoul, KR;
Jae-ouk Choo, Yongin-si, KR;
Ja-eung Koo, Suwon-si, KR;
II-Young Yoon, Hwaseong-si, KR;
Hong-Jae Shin, Seoul, KR;
Nae-In Lee, Seoul, KR;
Jae-Ouk Choo, Yongin-si, KR;
Ja-Eung Koo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Example embodiments provide a semiconductor device and a method of forming the same. According to the method, a capping insulation pattern may be formed to cover the top surface of a filling insulation pattern in a trench. The capping insulation pattern may have an etch selectivity according to the filling insulation pattern. As a result, the likelihood that the filling insulation layer may be etched by various cleaning processes and the process removing the buffer insulation pattern may be reduced or prevented.