The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Oct. 28, 2005
Chih-ching Tzeng, Yonghe, TW;
Den-lian Lin, Longtan Township, Taoyuan County, TW;
Shiaw-huei Chen, Yonghe, TW;
Ming-song Yang, Taipei, TW;
Jyh-ming Yan, Lujhu Township, Taoyuan County, TW;
Yuh-jenq Yu, Longtan Township, Taoyuan County, TW;
Chih-Ching Tzeng, Yonghe, TW;
Den-Lian Lin, Longtan Township, Taoyuan County, TW;
Shiaw-Huei Chen, Yonghe, TW;
Ming-Song Yang, Taipei, TW;
Jyh-Ming Yan, Lujhu Township, Taoyuan County, TW;
Yuh-Jenq Yu, Longtan Township, Taoyuan County, TW;
Abstract
The present invention provides a reactor utilizing high-voltage discharge for processing exhausted hydrogen gas emitted during membrane plating, etching, or washing of semiconductors, where higher than 95% of destruction and removal efficiency (DRE) of hydrogen gas is obtained.