The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
Aug. 03, 2007
Takuo Ohashi, Tokyo, JP;
Taishi Kubota, Tokyo, JP;
Takuo Ohashi, Tokyo, JP;
Taishi Kubota, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A method for forming a nitrogen-containing gate insulating film includes the steps of forming a silicon oxide film on a silicon substrate, nitriding the top portion of the silicon oxide film to form a thin silicon nitride layer, and forming a silicon nitride film on the silicon nitride layer by using an atomic layer deposition process, to obtain a gate insulating film having a higher nitrogen concentration, while suppressing the nitrogen concentration in the vicinity of the gate insulating film and the silicon substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile