The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2009
Filed:
May. 16, 2006
Kuei-yun Chen, Hsinchu, TW;
Chun-lien Su, Hsinchu, TW;
Yin-jen Chen, Hsinchu, TW;
Ming-shang Chen, Hsinchu, TW;
Kuei-Yun Chen, Hsinchu, TW;
Chun-Lien Su, Hsinchu, TW;
Yin-Jen Chen, Hsinchu, TW;
Ming-Shang Chen, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing a NAND flash memory is provided. First, a substrate is provided. Next, a tunneling dielectric layer, a first conductive layer and a mask layer are sequentially formed on the substrate. Next, a plurality of isolation structures is formed in the mask layer, the first conductive layer, the tunneling dielectric layer and the substrate. Next, the mask layer is removed, so that the top surface of each isolation structure is higher than that of the first conductive layer. Next, a second conductive layer is formed on the exposed sidewalls of the isolation structures. Next, an inter-gate dielectric layer and a third conductive layer are sequentially formed on the substrate.