The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Apr. 08, 2004
Victor Higgs, Hertfordshire, GB;
Victor Higgs, Hertfordshire, GB;
Nanometrics Incorporated, Milpitas, CA (US);
Abstract
A method of detecting surface particulate defects, and especially metal particulates, in semiconductors such as silicon, to characterise defects likely to have an effect on the electrical activity of such semiconductor materials, comprises exposing the surface of the semiconductor structure in the vicinity of a surface particulate to at least one high-intensity beam of light and collecting and processing the photoluminescence response; and using the result to identify unacceptable contamination levels resulting from diffusion of contaminant from particulate into semiconductor structure. Optionally, the semiconductor is annealed and photoluminescence responses collected before and after annealing to identify contaminant diffusion rates. Apparatus for the same is also described.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile