The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Dec. 01, 2005
Shigeki Ohbayashi, Tokyo, JP;
Hiroaki Suzuki, Tokyo, JP;
Koichiro Ishibashi, Tokyo, JP;
Hiroshi Makino, Tokyo, JP;
Shigeki Ohbayashi, Tokyo, JP;
Hiroaki Suzuki, Tokyo, JP;
Koichiro Ishibashi, Tokyo, JP;
Hiroshi Makino, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A CMOS LSI includes an inverter including first and second MOS transistors, a relatively long metal interconnection connected to an input node of the inverter, first and second diodes releasing charges born by the metal interconnection during a plasma process to first and second wells, and first and second MOS transistors maintaining a voltage between the first and second wells at a level not higher than a prescribed voltage. Therefore, even when an antenna ratio is high, a gate oxide film in the first and second MOS transistors is not damaged during the plasma process.