The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Feb. 01, 2005
Applicants:
Alexandros T. Demos, Fremont, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Tzu-fang Huang, San Jose, CA (US);
Wen H. Zhu, Sunnyvale, CA (US);
Inventors:
Alexandros T. Demos, Fremont, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Tzu-Fang Huang, San Jose, CA (US);
Wen H. Zhu, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05D 3/06 (2006.01); C08J 7/18 (2006.01); C23C 14/30 (2006.01); G21G 1/10 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to one embodiment of the invention, a method of modifying a mechanical, physical and/or electrical property of a dielectric layer comprises exposing the dielectric layer to a first dose of electron beam radiation at a first energy level; and thereafter, exposing the dielectric layer to a second dose of electron beam radiation at a second energy level that is different from the first energy level.