The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
Feb. 07, 2008
Jer-hau Hsu, Hsin-Chu, TW;
Fu-nian Liang, Hsin-Chu, TW;
Yufe-feng Lin, Hsin-Chu, TW;
Macronix International Co. Ltd., Hsin-Chu, TW;
Abstract
A memory is provided. The memory includes a memory cell, a clamp transistor, an inverter, a bit line, a pre-charge path and a detector and controller circuit. The memory is coupled to the clamp transistor. The clamp transistor has a first end, a second end and a control end. The inverter has an input end electrically connected to the second end of the clamp transistor and an output end electrically connected to the control end of the clamp transistor. The bit line is electrically connected to the second end of the clamp transistor and the input end of the inverter and has a bit-line voltage thereon. The pre-charge path is electrically connected to the first end of the clamp transistor through a node having a sensing voltage thereon. The detector and controller circuit is electrically connected to the first end of the clamp transistor and the pre-charge path for detecting the sensing voltage in order to open the pre-charge path to raise the bit-line voltage when the sensing voltage is at a low level and close the pre-charge path when the sensing voltage is at a high level.