The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2009
Filed:
May. 11, 2005
Hidefumi Takaya, Nishikamo-gun, JP;
Yasushi Okura, Toyokawa, JP;
Akira Kuroyanagi, Okazaki, JP;
Norihito Tokura, Okazaki, JP;
Hidefumi Takaya, Nishikamo-gun, JP;
Yasushi Okura, Toyokawa, JP;
Akira Kuroyanagi, Okazaki, JP;
Norihito Tokura, Okazaki, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
DENSO CORPORATION, Kariya-shi, JP;
Abstract
The present invention provides an insulated gate semiconductor device which has floating regions around the bottoms of trenches and which is capable of reliably achieving a high withstand voltage. An insulated gate semiconductor deviceincludes a cell area through which current flows and an terminal area which surrounds the cell area. The semiconductor devicealso has a plurality of gate trenchesin the cell area and a plurality of terminal trenchesin the terminal area. The gate trenchesare formed in a striped shape, and the terminal trenchesare formed concentrically. In the semiconductor device, the gate trenchesand the terminal trenchesare positioned in a manner that spacings between the ends of the gate trenchesand the side of the terminal trenchare uniform. That is, the length of the gate trenchesis adjusted according to the curvature of the corners of the terminal trench