The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 08, 2009

Filed:

Aug. 15, 2007
Applicants:

Chih-chao Yang, Poughkeepsie, NY (US);

Nancy R. Klymko, Hopewell Junction, NY (US);

Christopher C. Parks, Poughkeepsie, NY (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Inventors:

Chih-Chao Yang, Poughkeepsie, NY (US);

Nancy R. Klymko, Hopewell Junction, NY (US);

Christopher C. Parks, Poughkeepsie, NY (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interconnect structure of the single or dual damascene type and a method of forming the same, which substantially reduces the surface oxidation problem of plating a conductive material onto a noble metal seed layer are provided. In accordance with the present invention, a hydrogen plasma treatment is used to treat a noble metal seed layer such that the treated noble metal seed layer is highly resistant to surface oxidation. The inventive oxidation-resistant noble metal seed layer has a low C content and/or a low nitrogen content.


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