The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Feb. 27, 2007
Kouji Nakahara, Kunitachi, JP;
Koichiro Adachi, Musashino, JP;
Takashi Shiota, Sagamihara, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Kazunori Shinoda, Musashino, JP;
Kouji Nakahara, Kunitachi, JP;
Koichiro Adachi, Musashino, JP;
Takashi Shiota, Sagamihara, JP;
Tomonobu Tsuchiya, Hachioji, JP;
Kazunori Shinoda, Musashino, JP;
Opnext Japan, Inc., Kanagawa, JP;
Abstract
The relationship between the reflectivity characteristic of a DBR layer(s), in which an InP layer and an InGaAlAs layer are laminated alternatively, and the optical absorption characteristic of the InGaAlAs layer, is a trade-off in a vertical cavity surface emitting laser on an InP substrate. The present invention applies a semiconductor DBR layer(s), in which an InP layer and an InGaAlAs-MQW (multi-quantum-wells) layer are laminated alternatively, in order to dissolve the above trade-off. The InGaAlAs-MQW layer is composed of InGaAlAs-wells and barriers. The InP layer is doped uniformly and the InGaAlAs-MQW layer has a structure in which at least a part thereof is doped.