The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Dec. 23, 2004
Rachid Sbiaa, Tokyo, JP;
Isamu Sato, Tokyo, JP;
Rachid Sbiaa, Tokyo, JP;
Isamu Sato, Tokyo, JP;
TDK Corporation, Tokyo, JP;
Abstract
A magnetoresistance effect element includes a free layer as a first ferromagnetic layer, a pinned layer as a second ferromagnetic layer, and at least one nano-junction provided between the free layer and the pinned layer. The nano-junction contains at least one non-metal selected from the group consisting of oxygen, nitrogen, sulfur and chlorine. Preferably, the material for forming the nano-junction is a ferromagnetic metal selected from the group consisting of Fe, Ni, Co, NiFe, CoFe and CoFeNi or a halfmetal selected from the group consisting of NiFeSb, NiMnSb, PtMnSb and MnSb.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile