The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Oct. 25, 2005
Kojiro Kameyama, Ota, JP;
Akira Suzuki, Ota, JP;
Mitsuo Umemoto, Gunma, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Kanto Sanyo Semiconductor Co., Ltd., Gunma, JP;
Abstract
The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A refractory metal layer is formed on a pad electrode formed on a semiconductor substrate with a first insulation film therebetween. Next, a passivation layer is formed on a front surface of the semiconductor substrate including on the pad electrode and on the refractory metal layer, and a supporting body is further formed with a resin layer therebetween. Next the semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to the pad electrode. Next, a penetrating electrode electrically connected with the pad electrode exposed at a bottom of the via hole and a wiring layerare formed with a second insulation film therebetween. Furthermore, a solder resist layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated into semiconductor dies by dicing.