The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
Apr. 13, 2005
Hitoshi Ikeda, Annaka, JP;
Kingo Suzuki, Annaka, JP;
Akio Nakamura, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A light emitting device wafer having a light emitting layer sectionhaving an AlGaInP-base double heterostructure, and a GaP light extraction layerdisposed on the light emitting layer section so as to allow a first main surface thereof to compose a first main surface of the wafer is fabricated so that the first main surface of the GaP light extraction layer appears as the () surface. The first main surface of the GaP light extraction layercomposed of the () surface is etched using an etching solution for surface roughening to thereby form surface roughening projections. Accordingly, there can be provided a method of fabricating a light emitting device having the GaP light extraction layer agreed with the () main surface, capable of readily subjecting the () main surface to surface roughening.