The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2009
Filed:
May. 24, 2007
Yuling Liu, Tianjin, CN;
Xinhuan Niu, Tianjin, CN;
Shengli Wang, Tianjin, CN;
Juan Wang, Tianjin, CN;
Weiwei LI, Tianjin, CN;
Zhenguo MA, Tianjin, CN;
Yuling Liu, Tianjin, CN;
Xinhuan Niu, Tianjin, CN;
Shengli Wang, Tianjin, CN;
Juan Wang, Tianjin, CN;
Weiwei Li, Tianjin, CN;
Zhenguo Ma, Tianjin, CN;
Other;
Abstract
Taught is a method of removal surface contaminants, including organic contaminants, metal ions and solid particles, from silicon wafer surface comprising the following steps: (a) submerging the silicon wafer surface in an aqueous cleaning agent solution through which current is passed using a boron-doped diamond film as an electrode; (b) submerging the silicon wafer surface in an aqueous cleaning agent solution; subjecting the silicon wafer to ultrasound waves; and, optionally, heating the solution; (c) submerging the silicon wafer surface in water through which current is passed using a boron-doped diamond film as an electrode; (d) submerging the silicon wafer surface in water with ultrasound and heating; (e) repeating step (d); and (f) spraying the silicon surface with water. The results obtained using the method according to this invention are far superior to those obtained with conventional methods. The technology is simple, convenient to operate, and environmentally friendly.