The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Dec. 13, 2007
Ching-nan Hsiao, Kaohsiung County, TW;
Ying-cheng Chuang, Taoyuan County, TW;
Chung-lin Huang, Taoyuan County, TW;
Shih-yang Chiu, Taipei, TW;
Ching-Nan Hsiao, Kaohsiung County, TW;
Ying-Cheng Chuang, Taoyuan County, TW;
Chung-Lin Huang, Taoyuan County, TW;
Shih-Yang Chiu, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A memory structure including a substrate, a first dielectric layer, a first conducting layer, a second conducting layer, a second dielectric layer, a spacer and a doped region is provided. The substrate has a trench wherein. The first dielectric layer is disposed on the interior surface of the trench. The first conducting layer is disposed on the first dielectric layer of the lower portion of the trench. The second conducting layer is disposed above the first conducting layer and filling the trench. The second dielectric layer is disposed between the first conducting layer and the second conducting layer. The spacer is disposed between the first dielectric layer and the second conducting layer. The doped region is disposed in the substrate of a side of the trench.