The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Jun. 02, 2006
Applicants:

Kyoung Bong Rouh, Gyeonggi-do, KR;

Seung Woo Jin, Gyeonggi-do, KR;

Min Yong Jung, Seoul, KR;

Yong Soo Jung, Seoul, KR;

Inventors:

Kyoung Bong Rouh, Gyeonggi-do, KR;

Seung Woo Jin, Gyeonggi-do, KR;

Min Yong Jung, Seoul, KR;

Yong Soo Jung, Seoul, KR;

Assignee:

Hynix Semiconductor Inc., Icheon-shi, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G21K 5/10 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

An ion implantation apparatus includes an ion beam source for generating an ion beam; an implantation energy controller disposed on a path of the ion beam for controlling the ion implantation energy of the ion beam so that an ion beam having a first implantation energy is created for a first period of time and an ion beam having a second implantation energy is created for a second period of time; a beam line for accelerating the ion beam; and an end station for mounting a substrate, into which the ion beam accelerated by the beam line is implanted onto the substrate.


Find Patent Forward Citations

Loading…