The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Jul. 27, 2004
Applicant:
Jui-tsen Huang, Taipei, TW;
Inventor:
Jui-Tsen Huang, Taipei, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of relieving wafer stress is provided. A wafer is provided, wherein at least a dielectric layer has already formed over the wafer and the wafer has a first and a second area. At least no circuits are formed on the dielectric layer within the first area. Thereafter, openings are formed in the dielectric layer within the first area. A material layer is formed over the dielectric layer. Thus, pits are formed on the surface of the material layer at locations above the openings. Through the pits on the material layer, stress within the material layer is relieved and hence the amount of stress conferred to the wafer is reduced.