The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Mar. 16, 2006
Hidaki Takizawa, Kawasaki, JP;
Shougo Hayashi, Kawasaki, JP;
Takeshi Kinjo, Kawasaki, JP;
Makoto Tachibanaki, Kawasaki, JP;
Kenji Okamoto, Kawasaki, JP;
Hidaki Takizawa, Kawasaki, JP;
Shougo Hayashi, Kawasaki, JP;
Takeshi Kinjo, Kawasaki, JP;
Makoto Tachibanaki, Kawasaki, JP;
Kenji Okamoto, Kawasaki, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method for fabricating a thin film transistor matrix device which includes forming a transparent insulating substrate, arranging a plurality of thin film transistors on the substrate in a matrix, arranging a plurality of picture element electrodes on the substrate in a matrix and connecting the picture element electrodes to sources of the thin film transistors. The method also includes forming a plurality of bus lines for commonly connecting gates or drains of the thin film transistors, forming a plurality of bus line terminals on the ends of the bus lines, respectively, with each bus line terminal being provided for each bus line, and forming one connection line on the substrate in a region outer of plurality of the bus line terminals and commonly connecting the plurality of bus lines. The method further includes the step of electrically disconnecting the bus lines from the connection line by laser melting.