The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2009
Filed:
Sep. 08, 2006
Michael Iza, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Steven P. Denbaars, Golera, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
Michael Iza, Santa Barbara, CA (US);
Troy J. Baker, Santa Barbara, CA (US);
Benjamin A. Haskell, Santa Barbara, CA (US);
Steven P. DenBaars, Golera, CA (US);
Shuji Nakamura, Santa Barbara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Japan Science and Technology Agency, Kawaguchi, Saitama, JP;
Abstract
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.