The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Sep. 10, 2007
Byung-gil Choi, Yongin-si, KR;
Beak-hyung Cho, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Chang-han Choi, Yongin-si, KR;
Yu-hwan RO, Seoul, KR;
Byung-gil Choi, Yongin-si, KR;
Beak-hyung Cho, Hwaseong-si, KR;
Du-eung Kim, Yongin-si, KR;
Chang-han Choi, Yongin-si, KR;
Yu-hwan Ro, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a method of testing a phase change random access memory (PRAM). The method may include providing a plurality of PRAM cells each coupled between each of a plurality of first lines and each of a plurality of second lines intersecting the first lines, selecting at least one of the plurality of first lines while deselecting the remaining first lines and the plurality of second lines, pre-charging the selected at least one of the plurality of first lines to a predetermined or given voltage level, and sensing a change in the voltage level of the selected first line while supplying a monitoring voltage to the selected first line.