The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Sep. 11, 2006
Lap Chan, San Francisco, CA (US);
Kok Wai Johnny Chew, Singapore, SG;
Cher Liang Cha, Singapore, SG;
Chee Tee Chua, Singapore, SG;
Lap Chan, San Francisco, CA (US);
Kok Wai Johnny Chew, Singapore, SG;
Cher Liang Cha, Singapore, SG;
Chee Tee Chua, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
National University of Singapore, Singapore, SG;
Abstract
A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the stability support for the overlying metal inductor while also allowing horizontal air columns to simultaneously exist underneath the inductor. Overlying layers of air cavities that are spatially inserted between the created overlying layers of oxide fins can be created under the invention by repetitive application of the mask used. The presence of the air wells on the surface of the substrate significantly reduces parasitic capacitances and series resistance of the inductor associated with the substrate.