The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2009
Filed:
Apr. 01, 2008
Mason Terry, Redwood City, CA (US);
Malcolm Abbott, Sunnyvale, CA (US);
Maxim Kelman, Mountain View, CA (US);
Andreas Meisel, Redwood City, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Eric Schiff, DeWitt, NY (US);
Mason Terry, Redwood City, CA (US);
Malcolm Abbott, Sunnyvale, CA (US);
Maxim Kelman, Mountain View, CA (US);
Andreas Meisel, Redwood City, CA (US);
Dmitry Poplavskyy, San Jose, CA (US);
Eric Schiff, DeWitt, NY (US);
Innovalight, Inc., Sunnyvale, CA (US);
Abstract
A method for producing a Group IV semiconductor thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber, wherein the chamber further has a chamber pressure. The method further includes depositing a nanoparticle ink on the substrate, the nanoparticle ink including set of Group IV semiconductor nanoparticles and a solvent, wherein each nanoparticle of the set of Group IV semiconductor nanoparticles includes a nanoparticle surface, wherein a layer of Group IV semiconductor nanoparticles is formed. The method also includes striking a hydrogen plasma; and heating the layer of Group IV semiconductor nanoparticles to a fabrication temperature of between about 300° C. and about 1350° C., and between about 1 nanosecond and about 10 minutes; wherein the Group IV semiconductor thin film is formed.