Overwriting memory cells using low instantaneous current

Abstract

A memory device includes memory cells that are overwritten in response to receipt of a clear request signal and an overwrite value. The clear request signal enables all word lines of the memory device to be overwritten. The clear request signal in combination with the overwrite value cause the overwrite value to be written to a first column of memory cells. At least two delay elements transfer the overwrite value to another column of memory cells after a delay. By use of at least two delay elements to delay and transfer the overwrite value to be written to another column of memory cells, a relatively low magnitude of current can be used to cause memory cells to be overwritten. In addition, the value and sequence of values that overwrite memory cells can be controlled.