The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2009

Filed:

May. 31, 2006
Applicants:

Craig R. Metzner, Fremont, CA (US);

Shreyas S. Kher, Campbell, CA (US);

Vidyut Gopal, Santa Clara, CA (US);

Shixue Han, Milpitas, CA (US);

Shankarram A. Athreya, San Jose, CA (US);

Inventors:

Craig R. Metzner, Fremont, CA (US);

Shreyas S. Kher, Campbell, CA (US);

Vidyut Gopal, Santa Clara, CA (US);

Shixue Han, Milpitas, CA (US);

Shankarram A. Athreya, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.


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