The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Jun. 22, 2005
Jae-suk Lee, Icheon, KR;
Jae-Suk Lee, Icheon, KR;
Dongbu Electronics Co., Ltd., Seoul, KR;
Abstract
Semiconductor devices and methods of manufacturing the same are disclosed. In a disclosed method, a dangling bond in the active region(s) is removed by providing an enough Hin the PMD liner layer and the interlayer insulating layer directly contacting the active regions, and then gradually diffusing the Hin a subsequent heat treatment. The method includes forming a gate electrode having a side wall spacer, forming source and drain regions, forming a PMD liner layer by sequentially forming a SiO:H layer, a SiON:H layer and a SiN:H layer above the gate electrode and the source and drain regions, forming an interlayer insulating layer above the PMD liner layer, and diffusing hydrogen in the PMD liner layer and the interlayer insulating layer to the source and drain region by Nannealing or Ar annealing.