The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2009
Filed:
Aug. 08, 2005
Sug-woo Jung, Gyeonggi-do, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Jong-ho Yun, Gyeonggi-do, KR;
Kwan-jong Roh, Gyeonggi-do, KR;
Eun-ji Jung, Gyeonggi-do, KR;
Hyun-su Kim, Gyeonggi-do, KR;
Sug-Woo Jung, Gyeonggi-do, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Jong-Ho Yun, Gyeonggi-do, KR;
Kwan-Jong Roh, Gyeonggi-do, KR;
Eun-Ji Jung, Gyeonggi-do, KR;
Hyun-Su Kim, Gyeonggi-do, KR;
Abstract
Methods of forming metal silicide layers include a convection-based annealing step to convert a metal layer into a metal silicide layer. These methods may include forming a silicon layer on a substrate and forming a metal layer (e.g., nickel layer) in direct contact with the silicon layer. A step is then performed to convert at least a portion of the metal layer into a metal silicide layer. This conversion step is includes exposing the metal layer to an inert heat transferring gas (e.g., argon, nitrogen) in a convection or conduction apparatus.