The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Oct. 23, 2006
Yasushi Matsubara, Tokyo, JP;
Yasushi Matsubara, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A semiconductor device employs two electric fuses () connected in parallel to each other. First terminals of the electric fuses () are connected to a junction of first and second P-channel transistors (), which are connected in series between a high potential application line () and a ground, and connected to a third P-channel transistor (). Second terminals of the electric fuses () are connected to a low potential application line (). When an extra-high voltage is applied between the first and second terminals of the electric fuses (), a breakdown connection is produced in at least one of the electric fuses (). Thus, 1-bit information is written into the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile