The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2009
Filed:
Dec. 09, 2004
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Petrus Hubertus Cornelis Magnee, Leuven, BE;
Eddy Kunnen, Kessel-Lo, BE;
Francois Igor Neuilly, Helecine, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Petrus Hubertus Cornelis Magnee, Leuven, BE;
Eddy Kunnen, Kessel-Lo, BE;
Francois Igor Neuilly, Helecine, BE;
NXP B.V., Eindhoven, NL;
Abstract
A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region () adjacent to an active silicon region (); forming a silicon nitride/silicon stack () above the field isolation oxide region (), wherein the silicon nitride/silicon stack () includes a top layer of silicon () and a bottom layer of silicon nitride (); performing an etch to the silicon nitride/silicon stack () to form a stepped seed layer, wherein the top layer of silicon is etched laterally at the same time the bottom layer of silicon nitride is etched; and growing an Si/SiGe/Si stack () over the stepped seed layer and active region ().