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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7564096 B1

PDFFull Text
Date of Patent:
Jul. 21, 2009

Filed:

Feb. 09, 2007

Scalable power field effect transistor with improved heavy body structure and method of manufacture

Applicants:

Qi Wang, Sandy, UT (US);

Ming-huang Huang, Madison, WI (US);

Joelle Sharp, Herriman, UT (US);

Inventors:

Qi Wang, Sandy, UT (US);

Ming-Huang Huang, Madison, WI (US);

Joelle Sharp, Herriman, UT (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:

Townsend and Townsend and Crew LLP

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 29/06 (2006.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2006.01); H01L 31/109 (2006.01); H01L 29/22 (2006.01); H01L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A field effect transistor (FET) includes a semiconductor region of a first conductivity type and a well region of a second conductivity type extending over the semiconductor region. A gate electrode is adjacent to but insulated from the well region, and a source region of the first conductivity type is in the well region. A heavy body region is in electrical contact with the well region, and includes a material having a lower energy gap than the well region.

Find Patent Forward Citations

Wang, Qi. (2009). Scalable power field effect transistor with improved heavy body structure and method of manufacture (U.S. Patent No. 7564096). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7564096

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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