The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Nov. 02, 2006
Shinsaku Sekido, Osaka, JP;
Kyoji Yamashita, Kyoto, JP;
Katsuhiro Ootani, Nara, JP;
Yasuyuki Sahara, Kyoto, JP;
Daisaku Ikoma, Osaka, JP;
Shinsaku Sekido, Osaka, JP;
Kyoji Yamashita, Kyoto, JP;
Katsuhiro Ootani, Nara, JP;
Yasuyuki Sahara, Kyoto, JP;
Daisaku Ikoma, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
In a cell comprising an N well and a P well, a distance SPfrom a center line of a contact N-type region to an N well end of the N well is set to be a distance which causes a transistor not to be affected by resist. A distance from a well boundary to the center line of the contact N-type region is equal to SP. A design on the P well is similar to that on the N well. Thereby, modeling of the transistor in the cell can be performed, taking into consideration an influence from resist in one direction. Also, by fabricating a cell array which satisfies the above-described conditions, design accuracy can be improved.