The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Jan. 10, 2007
Toshihisa Gotoh, Fukuyama, JP;
Kenichi Azuma, Fukuyama, JP;
Kouichi Takeuchi, Ibara, JP;
Akiyoshi Mutoh, Fukuyama, JP;
Toshihisa Gotoh, Fukuyama, JP;
Kenichi Azuma, Fukuyama, JP;
Kouichi Takeuchi, Ibara, JP;
Akiyoshi Mutoh, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device includes a first insulating layer and a second insulating layer in a trench. The first insulating layer insulates two MOSFETs from each other, and the second insulating layer has a true stress opposite to a true stress of the first insulating layer. The second insulating layer includes two regions of different true stresses. This enables a drain current flow in each MOSFET to be independently controlled in a semiconductor device that employs a STI method for element isolation.