The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Jan. 23, 2008
Chin-hung Liu, Hsinchu County, TW;
Chin-lung Chen, Hsinchu County, TW;
Ming-tsung Tung, Hsinchu, TW;
Wen-kuo LI, Taoyuan County, TW;
Chin-Hung Liu, Hsinchu County, TW;
Chin-Lung Chen, Hsinchu County, TW;
Ming-Tsung Tung, Hsinchu, TW;
Wen-Kuo Li, Taoyuan County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An IC chip, including a switch LDMOS device and an analog LDMOS device, is configured on a substrate having a first conductive type. Components of the two LDMOS devices respectively include two gate conductive layers configured on two first active regions of the substrate. A common source contact region having a second conductive type is configured in a second active region, which is configured between the two first active regions. An isolation structure is included for isolating the second active region and the first active regions. The isolation structure between the first active regions and the second active region has a length 'A' extending along a longitudinal direction of a channel under each gate conductive layer, and each gate conductive layer on each first active region has a length 'L' extending along the longitudinal direction of the channel, the two LDMOS devices have different A/L values.