The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Dec. 13, 2006
Hee-soo Kang, Suwon-si, KR;
Jae-man Yoon, Seoul, KR;
Dong-gun Park, Sungnam-si, KR;
Sang-yeon Han, Suwon-si, KR;
Young-joon Ahn, Yuseong-gu, KR;
Choong-ho Lee, Sungnam-si, KR;
Hee-Soo Kang, Suwon-si, KR;
Jae-Man Yoon, Seoul, KR;
Dong-Gun Park, Sungnam-si, KR;
Sang-Yeon Han, Suwon-si, KR;
Young-Joon Ahn, Yuseong-gu, KR;
Choong-Ho Lee, Sungnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to the gate structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile